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Si4542DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 20 V
N-Ch
P-Ch
N-Ch
P-Ch
1.0
- 1.0
± 100
± 100
V
nA
V DS = 30 V, V GS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I DSS
V DS = - 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
P-Ch
N-Ch
-1
25
μA
V DS = - 30 V, V GS = 0 V, T J = 55 °C
P-Ch
- 25
On-State Drain Current a
I D(on)
V DS ≥ 5 V, V GS = 10 V
V DS ≤ - 5 V, V GS = - 10 V
V GS = 10 V, I D = 6.9 A
N-Ch
P-Ch
N-Ch
20
- 20
0.020
0.025
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 10 V, I D = - 6.1 A
V GS = 4.5 V, I D = 5.8 A
P-Ch
N-Ch
0.026
0.026
0.032
0.035
Ω
V GS = - 4.5 V, I D = - 5.1 A
P-Ch
0.036
0.045
Forward Transconductance a
Diode Forward Voltage a
g fs
V SD
V DS = 15 V, I D = 6.9 A
V DS = - 15 V, I D = - 6.1 A
I S = 1.7 A, V GS = 0 V
I S = - 1.7 A, V GS = 0 V
N-Ch
P-Ch
N-Ch
P-Ch
25
16
1.2
- 1.2
S
V
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q g
Q gs
Q gd
N-Channel
V DS = 15 V, V GS = 10 V, I D = 6.9 A
P-Channel
V DS = - 15 V, V GS = - 10 V, I D = - 6.1 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
32
7.5
7.0
3.5
5.0
50
50
nC
Gate Resistance
Turn-On Delay Time
Rise Time
R g
t d(on)
t r
N-Channel
V DD = 15 V, R L = 10 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.5
2
2
4
12
10
10
10
3.4
6.8
20
20
20
20
Ω
Turn-Off Delay Time
t d(off)
P-Channel
V DD = - 15 V, R L = 10 Ω
N-Ch
P-Ch
60
55
90
80
ns
Fall Time
Source-Drain
Reverse Recovery Time
Reverse Recovery Time
t f
t rr
Q rr
I D ? - 1 A, V GEN = - 10 V, R g = 6 Ω
I F = 1.7 A, dI/dt = 100 A/μs
I F = - 1.7 A, dI/dt = 100 A/μs
I F = 1.7 A, dI/dt = 100 A/μs
I F = - 1.7 A, dI/dt = 100 A/μs
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
15
25
50
50
45
55
30
40
90
90
nC
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70666
S09-0868-Rev. G, 18-May-09
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